Activation Energies

Activation energies of common impurities in GaAs

Activation energies of common impurities in Si

Ionisation energies for various common impurities in GaAs and Si. The levels below the gap centre are measured from the top of the valence band and are acceptor levels unless specified by D for donor level. The levels above the centre are measured from the bottom of the conduction band and are donor levels unless specified by an A for acceptor level.¹

References

1 S.M. Sze, Semiconductor Devices Physics and Technology.