TH-HELLISH:
A SMART VCSEL for a PIXEL

The material is grown by MOCVD, MOVPE or MBE, or PEMBE, but never by MCVD, consists of p-n layers of GaAlAs/GaAs or GaInAsP/GaAs/InP and even GaAlNAs somewhat similar to HEMT but in fact it is a cross between a CHINT and NERFET, but should never be confused with HE²PRAM, MOMOM or MOMS, THETA and FAMOS which are based on either ballistic transport or real space transfer in LDS and LDD. It can have MQWs like HBTs or MSMs. It's optical characterisation can be carried out using SPC, PITS, DLTS, PL and HEPL techniques. Electrical characterisation is done by measuring MT, SdH, HS I-V and T dependence of QM and TM. It can find applications in OTDM, WDM and BDD. It can be operated in RIFAT CW or PS mode. A DBR or two can be incorporated into the structure to achieve spectral purity higher than those in DFBs of FPs or conventional VCSELs. It can be incorporated into a NOLP or any OEIC to find applications in PIC, PCM and PMD and OTDM, SONET and SAGCM applications are more difficult to justify especially in the current climate of rejection of novel devices by established manufacturers. We beleive that SRS measurements are not possible due to high SNR in the SLMFD. PON and AONW applications are equally possible if it were to be made into a STM where STS measurements are easier. WDMAN applications look promising. However, WGR and XPM and TCP and IP applications do not look that encouraging.